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PD- 94240
IRGPS40B120UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast Co-Pack IGBT
VCES = 1200V VCE(on) typ. = 3.12V
Features
* Non Punch Through IGBT Technology. * Low Diode VF. * 10s Short Circuit Capability. * Square RBSOA. * Ultrasoft Diode Reverse Recovery Characteristics. * Positive VCE (on) Temperature Coefficient. * Super-247 Package.
G E
@ VGE = 15V,
N-channel
Benefits
* Benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Low EMI. * Significantly Less Snubber Required * Excellent Current Sharing in Parallel Operation.
ICE = 40A, Tj=25C
Super-247TM
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Max.
1200 80 40 160 160 80 40 160 20 595 238 -55 to +150 300 (0.063 in. (1.6mm) from case)
Units
V
A
V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Le Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Internal Emitter Inductance (5mm from package)
Min.
--- --- --- --- 20 (2) --- ---
Typ.
--- --- 0.24 --- --- 6.0 (0.21) 13
Max.
0.20 0.83 --- 40 --- --- ---
Units
C/W
N(kgf) g (oz) nH
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1
01/17/02
IRGPS40B120UD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe ICES VFM
IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 --- Temperature Coeff. of Breakdown Voltage --- 0.40 Collector-to-Emitter Saturation Voltage --- 3.12 --- 3.39 --- 3.88 --- 4.24 Gate Threshold Voltage 4.0 5.0 Temperature Coeff. of Threshold Voltage --- -12 Forward Transconductance --- 30.5 Zero Gate Voltage Collector Current --- --- --- 420 Diode Forward Voltage Drop --- 2.03 --- 2.17 --- 2.26 --- 2.46 Gate-to-Emitter Leakage Current --- ---
Ref.Fig. Max. Units Conditions --- V VGE = 0V, IC = 500A --- V/C VGE = 0V, IC = 1.0mA, (25C-125C) 5, 6 3.40 IC = 40A VGE = 15V 7, 9 3.70 V IC = 50A 10 4.30 IC = 40A, TJ = 125C 4.70 IC = 50A, TJ = 125C 11 9,10 6.0 VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 1.0mA, (25C-125C) 11 ,12 --- S VCE = 50V, IC = 40A, PW=80s 500 A VGE = 0V, VCE = 1200V 1200 VGE = 0V, VCE = 1200V, TJ = 125C 2.40 IC = 40A 8 2.60 V IC = 50A 2.68 IC = 40A, TJ = 125C 2.95 IC = 50A, TJ = 125C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operting Area Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions 510 IC = 40A 60 nC VCC = 600V 248 VGE = 15V 1750 J IC = 40A, VCC = 600V 2050 VGE = 15V,RG = 4.7, L =200H 3800 Ls = 150nH TJ = 25C 2300 TJ = 125C 2950 J Energy losses include "tail" and 5250 diode reverse recovery. 99 IC = 40A, VCC = 600V 55 VGE = 15V, RG = 4.7 L =200H 365 ns Ls = 150nH, T J = 125C 33 --- VGE = 0V --- pF VCC = 30V --- f = 1.0MHz TJ = 150C, IC = 160A, Vp =1200V FULL SQUARE VCC = 1000V, VGE = +15V to 0V RG = 4.7 TJ = 150C, Vp =1200V 10 --- --- s VCC = 900V, VGE = +15V to 0V, RG = 4.7 --- 3346 --- J TJ = 125C --- 180 --- ns VCC = 600V, IF = 60A, L =200H --- 50 --- A VGE = 15V,RG = 4.7, Ls = 150nH Typ. 340 40 165 1400 1650 3050 1950 2200 4150 76 39 332 25 4300 330 160
Ref.Fig.
23 CT1 CT4 WF1 WF2 13,15
14, 16 CT4 WF1 WF2 22
4 CT2 CT3 WF4
17,18,19
SCSOA Erec trr Irr
Short Circuit Safe Operting Area Reverse Recovery energy of the diode Diode Reverse Recovery time Diode Peak Reverse Recovery Current
20, 21
CT4,WF3
2
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IRGPS40B120UD
100 700 600 80 500
Ptot (W)
60
IC (A)
400 300 200
40
20 100 0 0 20 40 60 80 100 120 140 160 T C (C) 0 0 50 100 T C (C) 150 200
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
1000
1000
100
2 s 10 s
100
IC (A)
10 DC 1
100 s 1ms
IC A)
10 1 10 100 1000 10000
10ms
0.1 1 10 100 VCE (V) 1000 10000
VCE (V)
Fig. 3 - Forward SOA TC = 25C; TJS 150C
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V
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3
IRGPS40B120UD
80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
80 70 60 50
ICE (A)
60
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE (A)
40
40 30
20
20 10
0 0 1 2 3 VCE (V) 4 5 6
0 0 1 2 3 VCE (V) 4 5 6
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
80 70 60 50
ICE (A)
80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
IF (A)
70 60 50 40 30 20 10 0
-40C 25C 125C
40 30 20 10 0 0 1 2 3 VCE (V) 4 5 6
0
1
2 VF (V)
3
4
Fig. 7 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s
Fig. 8 - Typ. Diode Forward Characteristics tp = 80s
4
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IRGPS40B120UD
20 18 16 14
VCE (V) VCE (V)
20 18 16 14 ICE = 20A ICE = 40A ICE = 80A 12 10 8 6 4 2 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 20A ICE = 40A ICE = 80A
12 10 8 6 4 2 0
Fig. 9 - Typical VCE vs. VGE TJ = -40C
Fig. 10 - Typical VCE vs. VGE TJ = 25C
20 18 16 14
VCE (V) ICE (A)
500 450 400 350 ICE = 20A ICE = 40A ICE = 80A 300 250 200 150 100 50 0 5 10 VGE (V) 15 20 0 5 10 VGE (V) 15 20 T J = 125C T J = 25C T J = 25C T J = 125C
12 10 8 6 4 2 0
Fig. 11 - Typical VCE vs. VGE TJ = 125C
Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
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IRGPS40B120UD
4500 4000 3500 3000
Energy (J)
1000
tdOFF
Swiching Time (ns)
2500 2000 1500 1000 500 0 0 20
EOFF EON
100
td ON tF tR
40 IC (A)
60
80
10 20 40 60 80
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 125C; L=200H; VCE= 600V RG= 4.7; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC TJ = 125C; L=200H; VCE= 600V RG= 4.7; VGE= 15V
5000 4500 4000 3500
1000
tdOFF EOFF
3000 2500 2000 1500 1000 500 0 0 5 10
EON
Swiching Time (ns)
Energy (J)
100
tdON tR tF
10 15 20 25 0 5 10 15 20 25
RG ()
RG ()
Fig. 15 - Typ. Energy Loss vs. RG TJ = 125C; L=200H; VCE= 600V ICE= 40A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG TJ = 125C; L=200H; VCE= 600V ICE= 40A; VGE= 15V
6
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IRGPS40B120UD
60 60 50 50
RG = 4.7
40 40
IRR (A)
30
IRR (A)
60 80 100
30
RG = 22
20
RG = 47 RG = 100
20
10
10
0 0 20 40
0 0 50 100 150
IF (A)
RG ()
Fig. 17 - Typical Diode IRR vs. IF TJ = 125C
Fig. 18 - Typical Diode IRR vs. RG TJ = 125C; IF = 40A
60
9 8 4.7 22 47 40A 80A
50
7
40
6
Q RR (C)
IRR (A)
5 4 3 2 100 20A
30
20
10
1 0
0 500 1000 1500
0
0
500
1000
1500
diF /dt (A/s)
diF /dt (A/s)
Fig. 19- Typical Diode IRR vs. diF/dt VCC= 600V; VGE= 15V; ICE= 40A; TJ = 125C
Fig. 20 - Typical Diode QRR VCC= 600V; VGE= 15V;TJ = 125C
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IRGPS40B120UD
3500 3000 2500
4.7 22 47 100
Energy (J)
2000 1500 1000 500 0 0 20 40 60 80
100
IF (A)
Fig. 21 - Typical Diode ERR vs. IF TJ = 125C
10000
16
Cies
14 12 600V 800V
Capacitance (pF)
1000
10
VGE (V)
Coes Cres
100
8 6 4 2
10 0 20 40 60 80 100
0 0 100 200 300 400 Q G , Total Gate Charge (nC)
VCE (V)
Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
Fig. 23 - Typical Gate Charge vs. VGE ICE = 40A; L = 600H
8
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IRGPS40B120UD
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.01 0.02
0.1
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1 1
0.01 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 24. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20
0.1
0.10 0.05 0.01 0.02 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1 1 10
0.01
0.001 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 25. Normalized Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGPS40B120UD
L
L DUT
0
VCC
80 V Rg
DUT
1000V
1K
Fig.C.T.1 - Gate Charge Circuit (turn-on)
Fig.C.T.2 - RBSOA Circuit
Driver
D C
diode clamp / DUT
L
900V
- 5V DUT / DRIVER
Rg
VCC
DUT
Fig.C.T.3 - RBSOA Circuit
Fig.C.T.4 - RBSOA Circuit
R=
VCC ICM
DUT
Rg
VCC
Fig.C.T.5 - RBSOA Circuit
10
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IRGPS40B120UD
Fig. WF.1 - Typ. Turn-off Loss Waveform @ Tj=125C using Fig. CT.4 1100 1000 900 800 700 VCE (V) 600 ICE (A) 500 400 300 200 100 0 -100 -0.20 0.00
Eoff Loss 5% ICE 90% ICE
Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125C using Fig. CT.4 900 800 90 80 70 60
TEST CURRENT
50
40
700 600 500 VCE (V)
30
50
90% test current 10% test current
tf
20
400 300 200 100
40 30
5% V CE
10
5% V CE
20 10 0 -10 4.60
0
0 -100 4.10
0.20
0.40
0.60
-10 0.80
4.20
4.30
4.40
4.50
Time (s)
Time(s)
Fig. WF.3 - Typ. Diode Recovery Waveform @Tj=125C using Fig. CT.4 300 200 100 0 -100 VF (V) -200 -300 -400 -500 -600 -700 -800 -0.25
Peak IRR 10% Peak IRR
Fig. WF.4 - Typ. S.C. Waveform @ TC=150C using Fig. CT.3
50 40 QRR tRR 30 20 10
VCE (V)
1000 900 V CE 800 700 600 ICE
500 450 400 350 300 250 200 150 100 50 0 15.00 ICE (A)
IF (A)
0 -10 -20 -30 -40 -50 -60 0.25 time (S) 0.75
500 400 300 200 100 0 -5.00
0.00
5.00 time (S)
10.00
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11
ICE (A)
IRGPS40B120UD
Super-247TM Package Outline
0.13 [.005] 16.10 [.632] 15.10 [.595] 5.50 [.216] 4.50 [.178] 2.15 [.084] 1.45 [.058] 0.25 [.010] 13.90 [.547] 13.30 [.524] BA A
2X R 3.00 [.118] 2.00 [.079]
1.30 [.051] 0.70 [.028] 20.80 [.818] 19.80 [.780] 4 16.10 [.633] 15.50 [.611] 4
C 1 2 3
B O 1.60 [.063] MAX. E E
14.80 [.582] 13.80 [.544]
4.25 [.167] 3.85 [.152]
5.45 [.215] 2X
3X
1.60 [.062] 1.45 [.058] BA
3X
1.30 [.051] 1.10 [.044]
0.25 [.010]
SECT ION E-E NOT ES: 1. DIMENS IONING AND T OLERANCING PER AS ME Y14.5M-1994. 2. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ] 3. CONT ROLLING DIMENS ION: MILLIMET ER 4. OUT LINE CONFORMS T O JEDEC OUT LINE T O-274AA
2.35 [.092] 1.65 [.065]
LEAD ASS IGNMENT S MOSFET 1 - GAT E 2 - DRAIN 3 - S OURCE 4 - DRAIN IGBT 1 - GAT E 2 - COLLECT OR 3 - EMIT T ER 4 - COLLECT OR
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/02
12
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